N-channel 100 V, 11.3 mΩ typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Product overview: STL12N10F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, 12 A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 12 A, PowerFLAT, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL12N10F7 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1278010-STL12N10F7
Category: Discrete Semiconductor Products>Transistors
Series: STripFET™ F7
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-18214-6,497-1821
Base Product Number: STL12
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 100V 44A (Tc) 52W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
MOSFET N-channel 100 V, 11.3 mOhm typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package
MOSFET N-CH 100V 44A POWERFLAT
MOSFET, N-CH, 100V, 44A, 150DEG C, 52W; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0113ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STL12N10F7 | 1278010-STL12N10F7 | 497-18214-2-ND | STL12N10F7 | STL12N10F7 | 94AC2251 |
| Product Name | N-Channel 100 V 12 A PowerFLAT MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 44A, 150Deg C, 52W; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel |