STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL11N65M2 STL11N65M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103178-STL11N65M2 Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TA) Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12.4nC @ 10V Max Input Capacitance: 410pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 670 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103178-STL11N65M2 Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TA) Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12.4nC @ 10V Max Input Capacitance: 410pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 670 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL11N65M2 - 1103178-STL11N65M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL11N65M2
1103178-STL11N65M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL11N65M2 1103178-STL11N65M2
Manufacturer: STMicroelectronics Win Source Part Number: 1103178-STL11N65M2 Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TA) Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12.4nC @ 10V Max Input Capacitance: 410pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 670 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103178-STL11N65M2
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TA)
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12.4nC @ 10V
Max Input Capacitance: 410pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 670 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STL11N65M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STL11N65M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STL11N65M2
MOSFET N-CH 650V POWERFLAT 5X5 H

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1103178-STL11N65M2 STL11N65M2 STL11N65M2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL11N65M2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 650 volts
PD 85000 milliwatts
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