MOSFET N-CH 30V 11A POWERFLAT
Manufacturer: STMicroelectronics
Win Source Part Number: 031206-STL11N3LLH6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerFlat (3.3x3.3)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 1690pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 11A (Tc) 2W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
N-Channel 30V 11A (Tc) 2W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
N-Channel 30V 11A (Tc) 2W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
MOSFET, N-CH, 30V, 11A, POWERFLAT ROHS COMPLIANT: YES
MOSFET N-CH 30V 11A POWERFLAT
MOSFET N-Ch 30V 0.006 Ohm 11A STripFET VI Deep
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STL11N3LLH6 | 031206-STL11N3LLH6 | 497-11099-1-ND | 47AK6972 | STL11N3LLH6 | STL11N3LLH6 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL11N3LLH6 | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 11A, Powerflat Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 11000 milliamps |
