N-Channel 30V 11A (Tc) 2W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
N-Channel 30V 11A (Tc) 2W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
N-Channel 30V 11A (Tc) 2W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
N-channel 30 V, 6 mOhm typ., 11 A STripFET H6 Power MOSFET in a PowerFLAT(TM) 3.3 x 3.3 package Product overview: STL11N3LLH6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V, 6 mOhm, 11 A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, 6 mOhm, 11 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL11N3LLH6 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 031206-STL11N3LLH6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerFlat (3.3x3.3)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 1690pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 11A POWERFLAT
MOSFET N-Ch 30V 0.006 Ohm 11A STripFET VI Deep
MOSFET N-CH 30V 11A POWERFLAT
MOSFET, N-CH, 30V, 11A, POWERFLAT ROHS COMPLIANT: YES
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-11099-1-ND | 278-STL11N3LLH6 | 031206-STL11N3LLH6 | STL11N3LLH6 | STL11N3LLH6 | STL11N3LLH6 | 47AK6972 |
| Product Name | Single FETs, MOSFETs | N-Channel 30 V 6 mOhm 11 A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL11N3LLH6 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 11A, Powerflat Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | 8-PowerVDFN | SOT3; PowerFlat (3.3x3.3) | 8-PowerVDFN | 8-PowerVDFN | TO-3 | ||
| PD | 50000 milliwatts | 2000 to 50000 milliwatts | 2000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
