STMicroelectronics, Inc. Single FETs, MOSFETs STI6N80K5

MOSFET N-CH 800V 4.5A I2PAK

N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in an I2PAK package Product overview: STI6N80K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 1.3 Ohm, 4.5 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 1.3 Ohm, 4.5 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STI6N80K5 can be used for catalog matching and distributor lookup.

N-Channel 800V 4.5A (Tc) 85W (Tc) Through Hole I2PAK (TO-262)

Win Source Part Number: 1277975-STI6N80K5
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperMESH5™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 85W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
Vgs (Max): 30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-15017-5,-497-15017-5
Base Product Number: STI6
Drive Voltage (Max Rds On, Min Rds On): 10V