STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STI6N80K5

Description
Win Source Part Number: 1277975-STI6N80K5 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperMESH5™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 85W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V Vgs (Max): 30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-15017-5,-497-150 17-5 Base Product Number: STI6 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet
Description
Win Source Part Number: 1277975-STI6N80K5 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperMESH5™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 85W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V Vgs (Max): 30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-15017-5,-497-150 17-5 Base Product Number: STI6 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277975-STI6N80K5 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277975-STI6N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277975-STI6N80K5
Win Source Part Number: 1277975-STI6N80K5 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: SuperMESH5™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 85W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V Vgs (Max): 30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-15017-5,-497-150 17-5 Base Product Number: STI6 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277975-STI6N80K5
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: SuperMESH5™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 85W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
Vgs (Max): 30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-15017-5,-497-15017-5
Base Product Number: STI6
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - STI6N80K5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STI6N80K5
Single FETs, MOSFETs STI6N80K5
MOSFET N-CH 800V 4.5A I2PAK

MOSFET N-CH 800V 4.5A I2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-15017-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15017-5-ND
Single FETs, MOSFETs 497-15017-5-ND
N-Channel 800V 4.5A (Tc) 85W (Tc) Through Hole I2PAK (TO-262)

N-Channel 800V 4.5A (Tc) 85W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI6N80K5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI6N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI6N80K5
MOSFET N-CH 800V 4.5A I2PAK

MOSFET N-CH 800V 4.5A I2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in I2PAK package

MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in I2PAK package

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277975-STI6N80K5 STI6N80K5 497-15017-5-ND STI6N80K5 STI6N80K5
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type SOT3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA 255 pF @ 100 V
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 800 volts
Unlock Full Specs
to access all available technical data