STMicroelectronics, Inc. FETs - Single - STI40N65M2 STI40N65M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261098-STI40N65M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 250W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 32A Rds On (Maximum) at Id, Vgs: 99mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 56.5nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 2355pF at 100V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261098-STI40N65M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 250W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 32A Rds On (Maximum) at Id, Vgs: 99mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 56.5nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 2355pF at 100V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STI40N65M2 - 1261098-STI40N65M2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STI40N65M2
1261098-STI40N65M2
FETs - Single - STI40N65M2 1261098-STI40N65M2
Manufacturer: STMicroelectronics Win Source Part Number: 1261098-STI40N65M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 250W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 32A Rds On (Maximum) at Id, Vgs: 99mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 56.5nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 2355pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1261098-STI40N65M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 250W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 32A
Rds On (Maximum) at Id, Vgs: 99mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 56.5nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 2355pF at 100V

Buy Now
Single FETs, MOSFETs - 497-15552-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15552-5-ND
Single FETs, MOSFETs 497-15552-5-ND
N-Channel 650V 32A (Tc) 250W (Tc) Through Hole I2PAK

N-Channel 650V 32A (Tc) 250W (Tc) Through Hole I2PAK

Buy Now Datasheet
Singapore
N-Channel 650 V 0.087 Ohm 32 A MOSFET Transistor
278-STI40N65M2
N-Channel 650 V 0.087 Ohm 32 A MOSFET Transistor 278-STI40N65M2
N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package Product overview: STI40N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.087 Ohm, 32 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.087 Ohm, 32 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STI40N65M2 can be used for catalog matching and distributor lookup.

N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package Product overview: STI40N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.087 Ohm, 32 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.087 Ohm, 32 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STI40N65M2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package

MOSFET N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI40N65M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI40N65M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI40N65M2
MOSFET N-CH 650V 32A I2PAK

MOSFET N-CH 650V 32A I2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1261098-STI40N65M2 497-15552-5-ND 278-STI40N65M2 STI40N65M2 STI40N65M2
Product Name FETs - Single - STI40N65M2 Single FETs, MOSFETs N-Channel 650 V 0.087 Ohm 32 A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts
PD 250000 milliwatts
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