STMicroelectronics, Inc. Single FETs, MOSFETs STI40N65M2

Description
N-Channel 650V 32A (Tc) 250W (Tc) Through Hole I2PAK
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Description
N-Channel 650V 32A (Tc) 250W (Tc) Through Hole I2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-15552-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15552-5-ND
Single FETs, MOSFETs 497-15552-5-ND
N-Channel 650V 32A (Tc) 250W (Tc) Through Hole I2PAK

N-Channel 650V 32A (Tc) 250W (Tc) Through Hole I2PAK

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FETs - Single - STI40N65M2 - 1261098-STI40N65M2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STI40N65M2
1261098-STI40N65M2
FETs - Single - STI40N65M2 1261098-STI40N65M2
Manufacturer: STMicroelectronics Win Source Part Number: 1261098-STI40N65M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 250W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 32A Rds On (Maximum) at Id, Vgs: 99mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 56.5nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 2355pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1261098-STI40N65M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 250W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 32A
Rds On (Maximum) at Id, Vgs: 99mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 56.5nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 2355pF at 100V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI40N65M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI40N65M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI40N65M2
MOSFET N-CH 650V 32A I2PAK

MOSFET N-CH 650V 32A I2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package

MOSFET N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-15552-5-ND 1261098-STI40N65M2 STI40N65M2 STI40N65M2
Product Name Single FETs, MOSFETs FETs - Single - STI40N65M2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3 10V
V(BR)DSS 650 volts
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