Win Source Part Number: 987670-STI33N60M6
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ M6
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 190W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-STI33N60M6
Base Product Number: STI33
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 25A I2PAK
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 987670-STI33N60M6 | STI33N60M6 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |