STMicroelectronics, Inc. Single FETs, MOSFETs STI32N65M5

N-Channel 650V 24A (Tc) 150W (Tc) Through Hole I2PAK

Manufacturer: STMicroelectronics
Win Source Part Number: 066396-STI32N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 3320pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 119 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

650V 24A N-CH MOSFET 119mR TO-262 Power Transistor Product overview: STI32N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STI32N65M5 can be used for catalog matching and distributor lookup.