STMicroelectronics, Inc. Single FETs, MOSFETs STI270N4F3

Description
N-Channel 40V 160A (Tc) 330W (Tc) Through Hole I2PAK
Request a Quote Datasheet
Description
N-Channel 40V 160A (Tc) 330W (Tc) Through Hole I2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12598-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12598-5-ND
Single FETs, MOSFETs 497-12598-5-ND
N-Channel 40V 160A (Tc) 330W (Tc) Through Hole I2PAK

N-Channel 40V 160A (Tc) 330W (Tc) Through Hole I2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI270N4F3 - 1003603-STI270N4F3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI270N4F3
1003603-STI270N4F3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI270N4F3 1003603-STI270N4F3
Manufacturer: STMicroelectronics Win Source Part Number: 1003603-STI270N4F3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 330W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 160A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 7400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.6 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1003603-STI270N4F3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 160A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 7400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.6 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STI270N4F3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STI270N4F3
Single FETs, MOSFETs STI270N4F3
MOSFET N-CH 40V 160A I2PAK

MOSFET N-CH 40V 160A I2PAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch, 40V-2.1ohms 160A

MOSFET N-Ch, 40V-2.1ohms 160A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI270N4F3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI270N4F3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI270N4F3
MOSFET N-CH 40V 160A I2PAK

MOSFET N-CH 40V 160A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-12598-5-ND 1003603-STI270N4F3 STI270N4F3 STI270N4F3 STI270N4F3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI270N4F3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA
Transistor Grade / Operating Range Automotive
V(BR)DSS 40 volts 40 volts
PD 330000 milliwatts 330000 milliwatts
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