N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package Product overview: STI18N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.275 Ohm, 12 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.275 Ohm, 12 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STI18N65M2 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 898021-STI18N65M2
Series: MDmesh™ M2
Operating Temperature Range: 150°C (TJ)
Features: N-Channel 650 V 12A (Tc) 110W (Tc) Through Hole I2PAK
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Package: Tube
Mounting: Through Hole
Family Name: STI18
Categories: Discrete Semiconductor Products
Case / Package: I2PAK
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 650V 12A I2PAK
N-Channel 650V 12A (Tc) 110W (Tc) Through Hole I2PAK
MOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
MOSFET N-CH 650V 12A I2PAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STI18N65M2 | 898021-STI18N65M2 | STI18N65M2 | 497-15550-5-ND | STI18N65M2 | STI18N65M2 |
| Product Name | N-Channel 650 V 0.275 Ohm 12 A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI18N65M2 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| TJ | 150 C (302 F) | 150 C (302 F) | ||||
| Package Type | SOT3; I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA | Through Hole | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
