N-Channel 600V 11A (Tc) 90W (Tc) Through Hole I2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1103094-STI13NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 790pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 360 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): AOW7S65; STFI13NK60Z; IPI65R660CFDXKSA1;
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
MOSFET N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK
MOSFET, N CH, 600V, 11A, TO-262; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 600V 11A I2PAK
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-STI13NM60N-ND | 1103094-STI13NM60N | STI13NM60N | 87T3778 | STI13NM60N |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI13NM60N | MOSFET | Mosfet, N Ch, 600V, 11A, To-262; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3; I2PAK | TO-3 | TO-262-3 Long Leads, I2PAK, TO-262AA | |
| V(BR)DSS | 600 volts | ||||
| PD | 90000 milliwatts |
