STMicroelectronics, Inc. Single FETs, MOSFETs STI12NM50N

Description
N-Channel 500V 11A (Tc) 100W (Tc) Through Hole I2PAK
Request a Quote Datasheet
Description
N-Channel 500V 11A (Tc) 100W (Tc) Through Hole I2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STI12NM50N-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STI12NM50N-ND
Single FETs, MOSFETs STI12NM50N-ND
N-Channel 500V 11A (Tc) 100W (Tc) Through Hole I2PAK

N-Channel 500V 11A (Tc) 100W (Tc) Through Hole I2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI12NM50N - 066392-STI12NM50N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI12NM50N
066392-STI12NM50N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI12NM50N 066392-STI12NM50N
Manufacturer: STMicroelectronics Win Source Part Number: 066392-STI12NM50N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 940pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 066392-STI12NM50N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 940pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI12NM50N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI12NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI12NM50N
MOSFET N-CH 500V 11A I2PAK

MOSFET N-CH 500V 11A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STI12NM50N-ND 066392-STI12NM50N STI12NM50N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI12NM50N Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; I2PAK TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 500 volts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 94-3250TR-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type DirectFET™ Isometric MQ
View Details
2 suppliers
DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die - QPD2120D - Qorvo
Specs
Transistor Type PHEMT
Transistor Technology / Material DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die
Transistor Grade / Operating Range Military
View Details
2 suppliers