Win Source Part Number: 1278021-STI11NM80
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -65°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-13106-5
Base Product Number: STI11
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 800V 11A I2PAK
MOSFET N-Ch 800V 0.35 Ohm 11 A MDmesh
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1278021-STI11NM80 | STI11NM80 | STI11NM80 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel |