STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STI11NM80

Description
Win Source Part Number: 1278021-STI11NM80 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 150W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -65°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 60 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13106-5 Base Product Number: STI11 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet
Description
Win Source Part Number: 1278021-STI11NM80 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 150W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -65°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 60 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13106-5 Base Product Number: STI11 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278021-STI11NM80 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278021-STI11NM80
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278021-STI11NM80
Win Source Part Number: 1278021-STI11NM80 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 150W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -65°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 60 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13106-5 Base Product Number: STI11 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278021-STI11NM80
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -65°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-13106-5
Base Product Number: STI11
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI11NM80 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI11NM80
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI11NM80
MOSFET N-CH 800V 11A I2PAK

MOSFET N-CH 800V 11A I2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 800V 0.35 Ohm 11 A MDmesh

MOSFET N-Ch 800V 0.35 Ohm 11 A MDmesh

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1278021-STI11NM80 STI11NM80 STI11NM80
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
Unlock Full Specs
to access all available technical data