STMicroelectronics, Inc. Single FETs, MOSFETs STI11NM60ND

N-Channel 600V 10A (Tc) 90W (Tc) Through Hole I2PAK

Win Source Part Number: 1278125-STI11NM60ND
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: FDmesh™ II
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 90W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STI11N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V