STMicroelectronics, Inc. FETs - Single - STI10NM60N STI10NM60N

Manufacturer: STMicroelectronics
Win Source Part Number: 810525-STI10NM60N
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Part Status: Obsolete (End Of Life)
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 70W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 78 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 550mOhm at 4A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 540pF at 50V
Current - Continuous Drain (Id) at 25°C: 10A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STI10N
Maximum Vgs: ±25V

N-Channel 600V 10A (Tc) 70W (Tc) Through Hole I2PAK (TO-262)

POWER, FET Product overview: STI10NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STI10NM60N can be used for catalog matching and distributor lookup.