STMicroelectronics, Inc. Single FETs, MOSFETs STH80N10F7-2

Description
N-Channel 100V 80A (Tc) 110W (Tc) Surface Mount H2Pak-2
Request a Quote Datasheet
Description
N-Channel 100V 80A (Tc) 110W (Tc) Surface Mount H2Pak-2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-14980-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14980-2-ND
Single FETs, MOSFETs 497-14980-2-ND
N-Channel 100V 80A (Tc) 110W (Tc) Surface Mount H2Pak-2

N-Channel 100V 80A (Tc) 110W (Tc) Surface Mount H2Pak-2

Buy Now Datasheet
FETs - Single - STH80N10F7-2 - 803170-STH80N10F7-2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STH80N10F7-2
803170-STH80N10F7-2
FETs - Single - STH80N10F7-2 803170-STH80N10F7-2
Manufacturer: STMicroelectronics Win Source Part Number: 803170-STH80N10F7-2 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: H2Pak-2 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 110W (Tc) Popularity: Medium Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 9.5mOhm at 40A, 10V Gate Charge (Qg) (Maximum) at Vgs: 45nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 3100pF at 50V Current - Continuous Drain (Id) at 25°C: 80A (Tc) Vgs(th) (Maximum) at Id: 4.5V at 250μA Part Number Series: STH80N Maximum Vgs: ±20V

Manufacturer: STMicroelectronics
Win Source Part Number: 803170-STH80N10F7-2
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 110W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 9.5mOhm at 40A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 45nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3100pF at 50V
Current - Continuous Drain (Id) at 25°C: 80A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 250μA
Part Number Series: STH80N
Maximum Vgs: ±20V

Buy Now
Singapore
SMD 100V 80A MOSFET Transistor
278-STH80N10F7-2
SMD 100V 80A MOSFET Transistor 278-STH80N10F7-2
N-Ch MOSFET 100V 80A 9.5mR TO-263-3 Surface Mount Product overview: STH80N10F7-2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH80N10F7-2 can be used for catalog matching and distributor lookup.

N-Ch MOSFET 100V 80A 9.5mR TO-263-3 Surface Mount Product overview: STH80N10F7-2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH80N10F7-2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package

MOSFET N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package

Buy Now Datasheet
MOSFET N-CH 100V 80A H2PAK-2 - 761-STH80N10F7-2 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 80A H2PAK-2
761-STH80N10F7-2
MOSFET N-CH 100V 80A H2PAK-2 761-STH80N10F7-2
MOSFET N-CH 100V 80A H2PAK-2

MOSFET N-CH 100V 80A H2PAK-2

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STH80N10F7-2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STH80N10F7-2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STH80N10F7-2
MOSFET N-CH 100V 80A H2PAK-2

MOSFET N-CH 100V 80A H2PAK-2

Supplier's Site
Single FETs, MOSFETs - STH80N10F7-2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STH80N10F7-2
Single FETs, MOSFETs STH80N10F7-2
MOSFET N-CH 100V 80A H2PAK-2

MOSFET N-CH 100V 80A H2PAK-2

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-14980-2-ND 803170-STH80N10F7-2 278-STH80N10F7-2 STH80N10F7-2 761-STH80N10F7-2 STH80N10F7-2 STH80N10F7-2
Product Name Single FETs, MOSFETs FETs - Single - STH80N10F7-2 SMD 100V 80A MOSFET Transistor MOSFET MOSFET N-CH 100V 80A H2PAK-2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 3100 pF @ 50 V TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PD 110000 milliwatts 110000 milliwatts 110000 milliwatts 110000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Packing Method Tape Reel; Reel Tape Reel; Cut Tape (CT) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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