N-Ch MOSFET 100V 80A 9.5mR TO-263-3 Surface Mount Product overview: STH80N10F7-2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH80N10F7-2 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 803170-STH80N10F7-2
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 110W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 9.5mOhm at 40A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 45nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3100pF at 50V
Current - Continuous Drain (Id) at 25°C: 80A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 250μA
Part Number Series: STH80N
Maximum Vgs: ±20V
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STH80N10F7-2 | 803170-STH80N10F7-2 | STH80N10F7-2 | 497-14980-2-ND | 761-STH80N10F7-2 | STH80N10F7-2 | STH80N10F7-2 |
| Product Name | SMD 100V 80A MOSFET Transistor | FETs - Single - STH80N10F7-2 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET N-CH 100V 80A H2PAK-2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | 3100 pF @ 50 V | |||
| Packing Method | Tape Reel; Reel | Tape Reel; Cut Tape (CT) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
