N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package Product overview: STH6N95K5-2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 950 V, 1 Ohm, 6 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 950 V, 1 Ohm, 6 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH6N95K5-2 can be used for catalog matching and distributor lookup.
MOSFET N-CH 950V 6A H2PAK-2
Manufacturer: STMicroelectronics
Win Source Part Number: 811862-STH6N95K5-2
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 950V
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 110W (Tc)
Popularity: Low
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 1.25Ohm at 3A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 450pF at 100V
Current - Continuous Drain (Id) at 25°C: 6A (Tc)
Vgs(th) (Maximum) at Id: 5V at 100μA
Part Number Series: STH6N
Maximum Vgs: ±30V
N-Channel 950V 6A (Tc) 110W (Tc) Surface Mount H2Pak-2
N-Channel 950V 6A (Tc) 110W (Tc) Surface Mount H2Pak-2
N-Channel 950V 6A (Tc) 110W (Tc) Surface Mount H2Pak-2
MOSFET N-CH 950V 6A H2PAK-2
MOSFET, N-CH, 950V, 6A, 150DEG C, 110W; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:950V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STH6N95K5-2 | STH6N95K5-2 | 811862-STH6N95K5-2 | 497-16316-2-ND | STH6N95K5-2 | 26AH0179 | STH6N95K5-2 |
| Product Name | N-Channel 950 V 1 Ohm 6 A MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - STH6N95K5-2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 950V, 6A, 150Deg C, 110W; Transistor Polarity Stmicroelectronics | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 950 volts | ||||||
| IDSS | 6000 milliamps | 6000 milliamps | |||||
| PD | 110000 milliwatts | 110000 milliwatts |
