Win Source Part Number: 1038555-STH410N4F7-6
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, STripFET™ F7
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 365W (Tc)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: H2PAK-6
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPB160N04S203ATMA4; IRFS7434TRL7PP; IRLS3034TRL7PP; IRFS3004TRL7PP; STH320N4F6-6; SQM200N04-1M1L-GE3; STH270N4F3-6;
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-STH410N4F7-6AGCT
Base Product Number: STH410
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 40V 200A H2PAK-6
N-Channel 40V 200A (Tc) 365W (Tc) Surface Mount H2PAK-6
N-Channel 40V 200A (Tc) 365W (Tc) Surface Mount H2PAK-6
N-Channel 40V 200A (Tc) 365W (Tc) Surface Mount H2PAK-6
MOSFET N-CH 40V 200A H2PAK-6
MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038555-STH410N4F7-6AG | STH410N4F7-6AG | 497-STH410N4F7-6AGTR-ND | STH410N4F7-6AG | STH410N4F7-6AG |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 365000 milliwatts | 365000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | SOT3 | TO-263; TO-263-7, D²Pak (6 Leads + Tab) | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
