Manufacturer: STMicroelectronics
Win Source Part Number: 1103090-STH3N150-2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Family Name: STH3N150-2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: H2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab) Variant
Drain-Source Breakdown Voltage: 1500V
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 29.3nC @ 10V
Max Input Capacitance: 939pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 9 Ohm @ 1.3A, 10V
Alternative Parts (Cross-Reference): 2SK4177-DL-1E; IXTA3N150HV;
Introduction Date: February 08, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2031
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
MOSFET N-Ch 1500V 2.5A PowerMESH H2PAK2
MOSFET N-Ch 1500V 2.5A PowerMESH H2PAK2
MOSFET N-CH 1500V 2.5A H2PAK
N-Channel 1500V 2.5A (Tc) 140W (Tc) Surface Mount H²PAK
N-Channel 1500V 2.5A (Tc) 140W (Tc) Surface Mount H²PAK
N-Channel 1500V 2.5A (Tc) 140W (Tc) Surface Mount H²PAK
MOSFET N-CH 1500V 6Ohm 2.5A PowerMESH
MOSFET, N-CH, 1.5KV, 2.5A, 150DEG C/140W; Channel Type:N Channel; Drain Source Voltage Vds:1.5kV; Continuous Drain Current Id:2.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 1500V 2.5A H2PAK
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1103090-STH3N150-2 | 7925861P | 1032012 | STH3N150-2 | 497-13876-1-ND | STH3N150-2 | 98Y2479 | STH3N150-2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH3N150-2 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 1.5Kv, 2.5A, 150Deg C/140W; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 1500 volts | 1500 volts | ||||||
| PD | 140000 milliwatts | 140000 milliwatts | ||||||
| TJ | 150 C (302 F) | 150 C (302 F) | ||||||
| Package Type | TO-263; SOT3; H2PAK | H2PAK | H2pak-2 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), Variant | TO-263; TO-263-3, D2PAK (2 Leads + Tab), Variant | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), Variant |
