MOSFET N-CH 100V 180A H2PAK-2
Manufacturer: STMicroelectronics
Win Source Part Number: 066391-STH310N10F7-2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 315W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: H2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab) Variant
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 180A (Tc)
Gate-Source Threshold Voltage: 3.8V @ 250μA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 12800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 60A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2
MOSFET, N-CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
MOSFET N-CH 100V 2.1mOhm 180A STripFET VI
MOSFET N-CH 100V 180A H2PAK-2
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STH310N10F7-2 | 7863707 | 7863707P | 066391-STH310N10F7-2 | 497-13585-2-ND | 45AC7612 | STH310N10F7-2 | STH310N10F7-2 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH310N10F7-2 | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 180A, H2Pak-2; Channel Type Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| IDSS | 180000 milliamps | 180000 milliamps | ||||||
| PD | 315000 milliwatts | 315000 milliwatts |
