MOSFET N-CH 1200V 1.5A H2PAK-2
Automotive-grade N-channel 1200 V, 7.25 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in an H2PAK-2 package Product overview: STH2N120K5-2AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 1200 V, 7.25 Ohm, 1.5 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 1200 V, 7.25 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH2N120K5-2AG can be used for catalog matching and distributor lookup.
IGBT for high-voltage ind power swi
IGBT for high-voltage ind power swi
IGBT for high-voltage ind power swi
Win Source Part Number: 1278148-STH2N120K5-2
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 60W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: H2Pak-2
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-STH2N120K5-2AGDK
Base Product Number: STH2N120
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 1200V 1.5A (Tc) 60W (Tc) Surface Mount H2Pak-2
N-Channel 1200V 1.5A (Tc) 60W (Tc) Surface Mount H2Pak-2
N-Channel 1200V 1.5A (Tc) 60W (Tc) Surface Mount H2Pak-2
MOSFET, N-CH, 1.2KV, 1.5A, H2PAK-2 ROHS COMPLIANT: YES
MOSFET N-CH 1200V 1.5A H2PAK-2
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STH2N120K5-2AG | 278-STH2N120K5-2AG | 151438P | 1278148-STH2N120K5-2AG | 497-STH2N120K5-2AGTR-ND | 82AH9147 | STH2N120K5-2AG |
| Product Name | Single FETs, MOSFETs | Automotive N-Channel 1200 V 7.25 Ohm MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 1.5A, H2Pak-2 Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 1200 volts | ||||||
| IDSS | 1500 milliamps | ||||||
| PD | 60000 milliwatts |
