MOSFET N-CH 80V 180A H2PAK-6
Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package Product overview: STH275N8F7-6AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 80 V, 1.7 mOhm, 180 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 80 V, 1.7 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH275N8F7-6AG can be used for catalog matching and distributor lookup.
Win Source Part Number: 1186897-STH275N8F7-6
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, STripFET™ F7
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 315W (Tc)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: H2PAK-6
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-15474-6,497-1547
Base Product Number: STH275
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
MOSFET, AEC-Q101, N-CH, 80V, 180A ROHS COMPLIANT: YES
MOSFET N-CH 80V 180A H2PAK-6
MOSFET Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STH275N8F7-6AG | 278-STH275N8F7-6AG | 1186897-STH275N8F7-6AG | 497-15474-1-ND | 26AH0178 | STH275N8F7-6AG | STH275N8F7-6AG |
| Product Name | Single FETs, MOSFETs | Automotive N-Channel 80 V 1.7 mOhm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 80V, 180A Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 80 volts | ||||||
| IDSS | 180000 milliamps | ||||||
| PD | 315000 milliwatts | 315000 milliwatts |
