STMicroelectronics, Inc. Automotive N-Channel 100 V 3.9 mOhm MOSFET Transistor STH185N10F3-2

Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package Product overview: STH185N10F3-2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 100 V, 3.9 mOhm, 180 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 100 V, 3.9 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH185N10F3-2 can be used for catalog matching and distributor lookup.

N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2

Manufacturer: STMicroelectronics
Win Source Part Number: 806958-STH185N10F3-2
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 315W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 4.5mOhm at 60A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 114.6nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 6665pF at 25V
Current - Continuous Drain (Id) at 25°C: 180A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STH185
Maximum Vgs: ±20V