STMicroelectronics, Inc. Single FETs, MOSFETs STH185N10F3-2

Description
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2
Request a Quote Datasheet
Description
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-15311-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15311-2-ND
Single FETs, MOSFETs 497-15311-2-ND
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2

N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2

Buy Now Datasheet
FETs - Single - STH185N10F3-2 - 806958-STH185N10F3-2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STH185N10F3-2
806958-STH185N10F3-2
FETs - Single - STH185N10F3-2 806958-STH185N10F3-2
Manufacturer: STMicroelectronics Win Source Part Number: 806958-STH185N10F3-2 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: H2Pak-2 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 315W (Tc) Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 4.5mOhm at 60A, 10V Gate Charge (Qg) (Maximum) at Vgs: 114.6nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 6665pF at 25V Current - Continuous Drain (Id) at 25°C: 180A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STH185 Maximum Vgs: ±20V

Manufacturer: STMicroelectronics
Win Source Part Number: 806958-STH185N10F3-2
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 315W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 4.5mOhm at 60A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 114.6nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 6665pF at 25V
Current - Continuous Drain (Id) at 25°C: 180A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STH185
Maximum Vgs: ±20V

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Sheung Wan, Hong Kong
MOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package

MOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STH185N10F3-2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STH185N10F3-2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STH185N10F3-2
MOSFET N-CH 100V 180A H2PAK-2

MOSFET N-CH 100V 180A H2PAK-2

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-15311-2-ND 806958-STH185N10F3-2 STH185N10F3-2 STH185N10F3-2
Product Name Single FETs, MOSFETs FETs - Single - STH185N10F3-2 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
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