Manufacturer: STMicroelectronics
Win Source Part Number: 803431-STH180N4F6-2
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 190W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2.4mOhm at 60A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 130nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 7735pF at 25V
Current - Continuous Drain (Id) at 25°C: 120A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 250μA
Part Number Series: STH180
Maximum Vgs: ±20V
MOSFET N-CH 40V 120A H2PAK-2
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 803431-STH180N4F6-2 | STH180N4F6-2 | STH180N4F6-2 |
| Product Name | FETs - Single - STH180N4F6-2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel |