STMicroelectronics, Inc. Single FETs, MOSFETs STH180N10F3-6

Description
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
Request a Quote Datasheet
Description
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - 497-11840-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11840-2-ND
Single FETs, MOSFETs 497-11840-2-ND
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6

N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH180N10F3-6 - 760656-STH180N10F3-6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH180N10F3-6
760656-STH180N10F3-6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH180N10F3-6 760656-STH180N10F3-6
Manufacturer: STMicroelectronics Win Source Part Number: 760656-STH180N10F3-6 Series: STripFET III Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-7, D2Pak (6 Leads + Tab) Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Part Status: Obsolete(EOL) Family Name: STH180N10F3-6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: H2PAK Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 114.6nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6665pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 315W (Tc) Rds On (Maximum) @ Id, Vgs: 4.5 mOhm @ 60A, 10V Alternative Parts (Cross-Reference): STH240N10F7-6; Introduction Date: October 10, 2011 ECCN: EAR99 Estimated EOL Date: Obsolete Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 760656-STH180N10F3-6
Series: STripFET III
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-7, D2Pak (6 Leads + Tab)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Part Status: Obsolete(EOL)
Family Name: STH180N10F3-6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: H2PAK
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 114.6nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6665pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 315W (Tc)
Rds On (Maximum) @ Id, Vgs: 4.5 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): STH240N10F7-6;
Introduction Date: October 10, 2011
ECCN: EAR99
Estimated EOL Date: Obsolete
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STH180N10F3-6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STH180N10F3-6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STH180N10F3-6
MOSFET N-CH 100V 180A H2PAK-6

MOSFET N-CH 100V 180A H2PAK-6

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-11840-2-ND 760656-STH180N10F3-6 STH180N10F3-6
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH180N10F3-6 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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