Manufacturer: STMicroelectronics
Win Source Part Number: 031199-STH180N10F3-2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 315W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: H2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab) Variant
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 180A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 114.6nC @ 10V
Max Input Capacitance: 6665pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): AUIRFS4310ZTRL; STH15810-2; PSMN5R6-100BS;
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2
MOSFET N-CH 100V 180A H2PAK-2
N-Channel 100V 180A 4.5mR Power MOSFET H2PAK-2 Product overview: STH180N10F3-2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH180N10F3-2 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 180A H2PAK-2
MOSFET N-Ch 100V 3.9 mOhm 180A STripFET
MOSFET Transistor, N Channel, 180 A, 100 V, 0.0039 ohm, 10 V, 2 V RoHS Compliant: Yes
MOSFET, N CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 031199-STH180N10F3-2 | 497-11216-2-ND | STH180N10F3-2 | 278-STH180N10F3-2 | STH180N10F3-2 | STH180N10F3-2 | 94T3412 | 47T9309 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH180N10F3-2 | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 100V 180A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 180 A, 100 V, 0.0039 Ohm, 10 V, 2 V Rohs Compliant Stmicroelectronics | Mosfet, N Ch, 100V, 180A, H2Pak-2; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| PD | 315000 milliwatts | 315000 milliwatts | 315000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |
