STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH180N10F3-2 STH180N10F3-2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 031199-STH180N10F3-2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 315W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: H2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab) Variant Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 180A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 114.6nC @ 10V Max Input Capacitance: 6665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 60A, 10V Alternative Parts (Cross-Reference): AUIRFS4310ZTRL; STH15810-2; PSMN5R6-100BS; Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH180N10F3-2 - 031199-STH180N10F3-2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STH180N10F3-2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-11216-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-11216-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-11216-1-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STH180N10F3-2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 180 A, 100 V, 0.0039 Ohm, 10 V, 2 V Rohs Compliant Stmicroelectronics - 94T3412 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Ch, 100V, 180A, H2Pak-2; Channel Type Stmicroelectronics - 47T9309 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 031199-STH180N10F3-2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 315W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: H2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab) Variant Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 180A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 114.6nC @ 10V Max Input Capacitance: 6665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 60A, 10V Alternative Parts (Cross-Reference): AUIRFS4310ZTRL; STH15810-2; PSMN5R6-100BS; Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH180N10F3-2 - 031199-STH180N10F3-2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH180N10F3-2
031199-STH180N10F3-2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH180N10F3-2 031199-STH180N10F3-2
Manufacturer: STMicroelectronics Win Source Part Number: 031199-STH180N10F3-2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 315W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: H2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab) Variant Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 180A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 114.6nC @ 10V Max Input Capacitance: 6665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 60A, 10V Alternative Parts (Cross-Reference): AUIRFS4310ZTRL; STH15810-2; PSMN5R6-100BS; Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031199-STH180N10F3-2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 315W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: H2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab) Variant
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 180A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 114.6nC @ 10V
Max Input Capacitance: 6665pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): AUIRFS4310ZTRL; STH15810-2; PSMN5R6-100BS;
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STH180N10F3-2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STH180N10F3-2
Single FETs, MOSFETs STH180N10F3-2
MOSFET N-CH 100V 180A H2PAK-2

MOSFET N-CH 100V 180A H2PAK-2

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-11216-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11216-2-ND
Single FETs, MOSFETs 497-11216-2-ND
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2

N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2

Buy Now Datasheet
Single FETs, MOSFETs - 497-11216-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11216-6-ND
Single FETs, MOSFETs 497-11216-6-ND
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2

N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2

Buy Now Datasheet
Single FETs, MOSFETs - 497-11216-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11216-1-ND
Single FETs, MOSFETs 497-11216-1-ND
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2

N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STH180N10F3-2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STH180N10F3-2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STH180N10F3-2
MOSFET N-CH 100V 180A H2PAK-2

MOSFET N-CH 100V 180A H2PAK-2

Supplier's Site
Mosfet Transistor, N Channel, 180 A, 100 V, 0.0039 Ohm, 10 V, 2 V Rohs Compliant Stmicroelectronics - 94T3412 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 180 A, 100 V, 0.0039 Ohm, 10 V, 2 V Rohs Compliant Stmicroelectronics
94T3412
Mosfet Transistor, N Channel, 180 A, 100 V, 0.0039 Ohm, 10 V, 2 V Rohs Compliant Stmicroelectronics 94T3412
MOSFET Transistor, N Channel, 180 A, 100 V, 0.0039 ohm, 10 V, 2 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 180 A, 100 V, 0.0039 ohm, 10 V, 2 V RoHS Compliant: Yes

Supplier's Site
Mosfet, N Ch, 100V, 180A, H2Pak-2; Channel Type Stmicroelectronics - 47T9309 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 100V, 180A, H2Pak-2; Channel Type Stmicroelectronics
47T9309
Mosfet, N Ch, 100V, 180A, H2Pak-2; Channel Type Stmicroelectronics 47T9309
MOSFET, N CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STH180N10F3-2
MOSFET STH180N10F3-2
MOSFET N-Ch 100V 3.9 mOhm 180A STripFET

MOSFET N-Ch 100V 3.9 mOhm 180A STripFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 031199-STH180N10F3-2 STH180N10F3-2 497-11216-2-ND STH180N10F3-2 94T3412 47T9309 STH180N10F3-2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH180N10F3-2 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 180 A, 100 V, 0.0039 Ohm, 10 V, 2 V Rohs Compliant Stmicroelectronics Mosfet, N Ch, 100V, 180A, H2Pak-2; Channel Type Stmicroelectronics MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 315000 milliwatts 315000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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