STMicroelectronics, Inc. Single FETs, MOSFETs STH160N4LF6-2

Description
N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount H2Pak-2
Request a Quote Datasheet
Description
N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount H2Pak-2
Request a Quote Datasheet

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Single FETs, MOSFETs - 497-15466-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15466-2-ND
Single FETs, MOSFETs 497-15466-2-ND
N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount H2Pak-2

N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount H2Pak-2

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH160N4LF6-2 - 1103085-STH160N4LF6-2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH160N4LF6-2
1103085-STH160N4LF6-2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH160N4LF6-2 1103085-STH160N4LF6-2
Manufacturer: STMicroelectronics Win Source Part Number: 1103085-STH160N4LF6- 2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: H2Pak-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab) Variant Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 181nC @ 10V Max Input Capacitance: 8130pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 mOhm @ 60A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103085-STH160N4LF6-2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: H2Pak-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab) Variant
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 181nC @ 10V
Max Input Capacitance: 8130pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 mOhm @ 60A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STH160N4LF6-2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STH160N4LF6-2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STH160N4LF6-2
MOSFET N-CH 40V 120A H2PAK-2

MOSFET N-CH 40V 120A H2PAK-2

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-15466-2-ND 1103085-STH160N4LF6-2 STH160N4LF6-2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH160N4LF6-2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; H2Pak-2 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 40 volts
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