STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFW3N150 STFW3N150

Description
Manufacturer: STMicroelectronics Win Source Part Number: 089526-STFW3N150 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Family Name: STW3N150 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3PF Dimension: TO-3P-3 Full Pack Drain-Source Breakdown Voltage: 1500V (1.5kV) Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 29.3nC @ 10V Max Input Capacitance: 939pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 9 Ohm @ 1.3A, 10V Alternative Parts (Cross-Reference): 2SK3747-E; 2SK3747-MG8; 2SK2225-80-E#T2; Introduction Date: January 12, 2007 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 089526-STFW3N150 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Family Name: STW3N150 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3PF Dimension: TO-3P-3 Full Pack Drain-Source Breakdown Voltage: 1500V (1.5kV) Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 29.3nC @ 10V Max Input Capacitance: 939pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 9 Ohm @ 1.3A, 10V Alternative Parts (Cross-Reference): 2SK3747-E; 2SK3747-MG8; 2SK2225-80-E#T2; Introduction Date: January 12, 2007 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFW3N150 - 089526-STFW3N150 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFW3N150
089526-STFW3N150
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFW3N150 089526-STFW3N150
Manufacturer: STMicroelectronics Win Source Part Number: 089526-STFW3N150 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Family Name: STW3N150 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3PF Dimension: TO-3P-3 Full Pack Drain-Source Breakdown Voltage: 1500V (1.5kV) Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 29.3nC @ 10V Max Input Capacitance: 939pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 9 Ohm @ 1.3A, 10V Alternative Parts (Cross-Reference): 2SK3747-E; 2SK3747-MG8; 2SK2225-80-E#T2; Introduction Date: January 12, 2007 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 089526-STFW3N150
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 63W (Tc)
Family Name: STW3N150
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3PF
Dimension: TO-3P-3 Full Pack
Drain-Source Breakdown Voltage: 1500V (1.5kV)
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 29.3nC @ 10V
Max Input Capacitance: 939pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 9 Ohm @ 1.3A, 10V
Alternative Parts (Cross-Reference): 2SK3747-E; 2SK3747-MG8; 2SK2225-80-E#T2;
Introduction Date: January 12, 2007
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
MOSFETs - 7610493 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7610493
MOSFETs 7610493
MOSFET N-Channel 1.5KV 2.5A TO-3PF

MOSFET N-Channel 1.5KV 2.5A TO-3PF

Supplier's Site
MOSFETs - 7610493P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7610493P
MOSFETs 7610493P
MOSFET N-Channel 1.5KV 2.5A TO-3PF

MOSFET N-Channel 1.5KV 2.5A TO-3PF

Supplier's Site
MOSFETs - 1687544 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1687544
MOSFETs 1687544
MOSFET N-Channel 1.5KV 2.5A TO-3PF

MOSFET N-Channel 1.5KV 2.5A TO-3PF

Supplier's Site
Single FETs, MOSFETs - 497-10005-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10005-5-ND
Single FETs, MOSFETs 497-10005-5-ND
N-Channel 1500V 2.5A (Tc) 63W (Tc) Through Hole TO-3PF

N-Channel 1500V 2.5A (Tc) 63W (Tc) Through Hole TO-3PF

Buy Now Datasheet
Transistor - 38965114 - Radwell International
Willingboro, NJ, United States
Transistor
38965114
Transistor 38965114
POWER FIELD-EFFECT TRANSISTOR, 2.5A I(D), 1500V, 9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-3PF, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 2.5A I(D), 1500V, 9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-3PF, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - STFW3N150 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STFW3N150
Single FETs, MOSFETs STFW3N150
MOSFET N-CH 1500V 2.5A ISOWATT

MOSFET N-CH 1500V 2.5A ISOWATT

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 2.5 A, 1.5 Kv, 6 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics - 94T3364 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 2.5 A, 1.5 Kv, 6 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics
94T3364
Mosfet Transistor, N Channel, 2.5 A, 1.5 Kv, 6 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics 94T3364
MOSFET Transistor, N Channel, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
STFW3N150
Triode/MOS Tube/Transistor >> MOSFETs STFW3N150
1.5kV 2.5A 63W 9Ω@10V,1.3A 5V@250uA N Channel TO-3PF MOSFETs ROHS

1.5kV 2.5A 63W 9Ω@10V,1.3A 5V@250uA N Channel TO-3PF MOSFETs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 1500 V 2.5 A PowerMESH

MOSFET N-channel 1500 V 2.5 A PowerMESH

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STFW3N150 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STFW3N150
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STFW3N150
N-channel 1500 V, 6 Ohm typ., 2.

N-channel 1500 V, 6 Ohm typ., 2.

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey Radwell International ODG (Origin Data Global) Newark, An Avnet Company LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 089526-STFW3N150 7610493 7610493P 497-10005-5-ND 38965114 STFW3N150 94T3364 STFW3N150 STFW3N150 STFW3N150
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFW3N150 MOSFETs MOSFETs Single FETs, MOSFETs Transistor Single FETs, MOSFETs Mosfet Transistor, N Channel, 2.5 A, 1.5 Kv, 6 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics Triode/MOS Tube/Transistor >> MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 1500 volts 1500 volts 1500 volts
PD 63000 milliwatts 63000 milliwatts 63000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type TO-3; SOT3; TO-3PF To-3pf TO-3PF TO-3; TO-3P-3 Full Pack TO-3; TO-3P-3 Full Pack TO-3 TO-3 TO-3P-3 Full Pack
Unlock Full Specs
to access all available technical data

Similar Products

 - AUIRFR3607TRL - Rochester Electronics
Specs
Polarity N-Channel
Package Type DPAK
Packing Method Tape Reel; Tape & Reel
View Details
5 suppliers
GaAs Fet Switches - KS201 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details