STMicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STFU25N60M2-EP

Description
Win Source Part Number: 1278074-STFU25N60M2- EP Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2 Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 188mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 30W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STFU25 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1278074-STFU25N60M2- EP Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2 Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 188mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 30W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STFU25 Drive Voltage (Max Rds On, Min Rds On): 10V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278074-STFU25N60M2-EP - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278074-STFU25N60M2-EP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278074-STFU25N60M2-EP
Win Source Part Number: 1278074-STFU25N60M2- EP Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2 Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 188mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 30W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STFU25 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278074-STFU25N60M2-EP
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ M2
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 188mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 30W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STFU25
Drive Voltage (Max Rds On, Min Rds On): 10V

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Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP ultra narrow leads package

MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP ultra narrow leads package

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Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STFU25N60M2-EP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STFU25N60M2-EP
MOSFET N-CH 600V 18A TO220FP

MOSFET N-CH 600V 18A TO220FP

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1278074-STFU25N60M2-EP STFU25N60M2-EP STFU25N60M2-EP
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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