Win Source Part Number: 1278070-STFU16N65M2
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ M2
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-19310-6,497-1931
Base Product Number: STFU16
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 11A TO220FP
N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package Product overview: STFU16N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.32 Ohm, 11 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.32 Ohm, 11 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STFU16N65M2 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 11A TO220FP
MOSFET, N-CH, 650V, 11A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1278070-STFU16N65M2 | STFU16N65M2 | 278-STFU16N65M2 | STFU16N65M2 | 33AC3214 | STFU16N65M2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | N-Channel 650 V 0.32 Ohm 11 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 11A, To-220Fp; Transistor Polarity Stmicroelectronics | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; SOT3 | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | |||||
| IDSS | 11000 milliamps | 11000 milliamps |
