STMicroelectronics, Inc. Single FETs, MOSFETs STFI7N80K5

Description
N-Channel 800V 6A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)
Request a Quote Datasheet
Description
N-Channel 800V 6A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-14557-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14557-5-ND
Single FETs, MOSFETs 497-14557-5-ND
N-Channel 800V 6A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)

N-Channel 800V 6A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFI7N80K5 - 1102986-STFI7N80K5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFI7N80K5
1102986-STFI7N80K5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFI7N80K5 1102986-STFI7N80K5
Manufacturer: STMicroelectronics Win Source Part Number: 1102986-STFI7N80K5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAKFP (TO-281) Dimension: TO-262-3 Full Pack, I2Pak Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 13.4nC @ 10V Max Input Capacitance: 360pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1102986-STFI7N80K5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAKFP (TO-281)
Dimension: TO-262-3 Full Pack, I2Pak
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 13.4nC @ 10V
Max Input Capacitance: 360pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STFI7N80K5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STFI7N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STFI7N80K5
MOSFET N-CH 800V 6A I2PAKFP

MOSFET N-CH 800V 6A I2PAKFP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-14557-5-ND 1102986-STFI7N80K5 STFI7N80K5
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFI7N80K5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Full Pack, I2PAK SOT3; I2PAKFP (TO-281) 360 pF @ 100 V
V(BR)DSS 800 volts
Unlock Full Specs
to access all available technical data