STMicroelectronics, Inc. Single FETs, MOSFETs STFI6N65K3

MOSFET N-CH 650V 5.4A I2PAKFP

N-Channel 650V 5.4A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)

N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package Product overview: STFI6N65K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 1.1 Ohm, 5.4 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 1.1 Ohm, 5.4 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STFI6N65K3 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 1325415-STFI6N65K3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 50
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: I2PAKFP (TO-281)
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-262-3 Full Pack, I²Pak
ECCN: EAR99
Fake Threat In the Open Market: 74
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-13599-5,-497-13599-5
Base Product Number: STFI6N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant