STMicroelectronics, Inc. Single FETs, MOSFETs STFI4N62K3

Description
N-Channel 620V 3.8A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)
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Description
N-Channel 620V 3.8A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-STFI4N62K3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STFI4N62K3-ND
Single FETs, MOSFETs 497-STFI4N62K3-ND
N-Channel 620V 3.8A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)

N-Channel 620V 3.8A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)

Buy Now Datasheet
Single FETs, MOSFETs - STFI4N62K3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STFI4N62K3
Single FETs, MOSFETs STFI4N62K3
MOSFET N CH 620V 3.8A I2PAKFP

MOSFET N CH 620V 3.8A I2PAKFP

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFI4N62K3 - 1102985-STFI4N62K3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFI4N62K3
1102985-STFI4N62K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFI4N62K3 1102985-STFI4N62K3
Manufacturer: STMicroelectronics Win Source Part Number: 1102985-STFI4N62K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: I2PAKFP (TO-281) Dimension: TO-262-3 Full Pack, I2Pak Drain-Source Breakdown Voltage: 620V Continuous Drain Current at 25°C: 3.8A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 550pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102985-STFI4N62K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: I2PAKFP (TO-281)
Dimension: TO-262-3 Full Pack, I2Pak
Drain-Source Breakdown Voltage: 620V
Continuous Drain Current at 25°C: 3.8A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 550pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 1.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STFI4N62K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STFI4N62K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STFI4N62K3
MOSFET N CH 620V 3.8A I2PAKFP

MOSFET N CH 620V 3.8A I2PAKFP

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-STFI4N62K3-ND STFI4N62K3 1102985-STFI4N62K3 STFI4N62K3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFI4N62K3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-262-3 Full Pack, I2PAK TO-262-3 Full Pack, I²Pak SOT3; I2PAKFP (TO-281) TO-262-3 Full Pack, I2PAK
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 620 volts 620 volts
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