STMicroelectronics, Inc. Single FETs, MOSFETs STFI24N60M2

Description
N-Channel 600V 18A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)
Request a Quote Datasheet
Description
N-Channel 600V 18A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 497-13598-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13598-5-ND
Single FETs, MOSFETs 497-13598-5-ND
N-Channel 600V 18A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)

N-Channel 600V 18A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFI24N60M2 - 1102984-STFI24N60M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFI24N60M2
1102984-STFI24N60M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFI24N60M2 1102984-STFI24N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 1102984-STFI24N60M2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAKFP (TO-281) Dimension: TO-262-3 Full Pack, I2Pak Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1060pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 190 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102984-STFI24N60M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAKFP (TO-281)
Dimension: TO-262-3 Full Pack, I2Pak
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1060pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STFI24N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STFI24N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STFI24N60M2
MOSFET N CH 600V 18A TO281

MOSFET N CH 600V 18A TO281

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-13598-5-ND 1102984-STFI24N60M2 STFI24N60M2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFI24N60M2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Full Pack, I2PAK SOT3; I2PAKFP (TO-281) TO-262-3 Full Pack, I2PAK
V(BR)DSS 600 volts
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