N-Channel 650V 18A (Tc) 130W (Tc) Through Hole I2PAKFP (TO-281)
Manufacturer: STMicroelectronics
Win Source Part Number: 1003055-STFI20N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: I2PAKFP (TO-281)
Dimension: TO-262-3 Full Pack, I2Pak
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1345pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
MOSFET N CH 650V 18A I2PAKFP
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-13533-ND | 1003055-STFI20N65M5 | STFI20N65M5 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STFI20N65M5 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-262-3 Full Pack, I2PAK | SOT3; I2PAKFP (TO-281) | TO-262-3 Full Pack, I2PAK |
| V(BR)DSS | 650 volts |
