STMicroelectronics, Inc. Single FETs, MOSFETs STFI15N60M2-EP

N-Channel 600V 11A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)

N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a I2PAKFP package Product overview: STFI15N60M2-EP from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.340 Ohm, 11 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.340 Ohm, 11 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STFI15N60M2-EP can be used for catalog matching and distributor lookup.

Win Source Part Number: 1278068-STFI15N60M2-EP
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ M2
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 378mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I²Pak
Supplier Device Package: I2PAKFP (TO-281)
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-15957-5,-497-15957-5
Base Product Number: STFI15N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V