STMicroelectronics, Inc. FETs - Single - STFI13N60M2 STFI13N60M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260987-STFI13N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAKFP (TO-281) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-262-3 Full Pack, I2Pak Power Dissipation (Maximum): 25W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 380mOhm at 5.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 580pF at 100V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260987-STFI13N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAKFP (TO-281) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-262-3 Full Pack, I2Pak Power Dissipation (Maximum): 25W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 380mOhm at 5.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 580pF at 100V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STFI13N60M2 - 1260987-STFI13N60M2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STFI13N60M2
1260987-STFI13N60M2
FETs - Single - STFI13N60M2 1260987-STFI13N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 1260987-STFI13N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAKFP (TO-281) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-262-3 Full Pack, I2Pak Power Dissipation (Maximum): 25W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 380mOhm at 5.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 580pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260987-STFI13N60M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I2PAKFP (TO-281)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-262-3 Full Pack, I2Pak
Power Dissipation (Maximum): 25W
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 11A
Rds On (Maximum) at Id, Vgs: 380mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 580pF at 100V

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497-13950-5-ND
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Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STFI13N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STFI13N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STFI13N60M2
MOSFET N-CH 600V 11A I2PAKFP

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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1260987-STFI13N60M2 497-13950-5-ND STFI13N60M2
Product Name FETs - Single - STFI13N60M2 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 25000 milliwatts
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