STMicroelectronics, Inc. Single FETs, MOSFETs STFI10NK60Z

N-Channel 600V 10A (Tc) 35W (Tc) Through Hole I2PAKFP (TO-281)

N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in I2PAKFP package Product overview: STFI10NK60Z from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Zener, 600 V, 0.65 Ohm, 10 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Zener, 600 V, 0.65 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STFI10NK60Z can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 066367-STFI10NK60Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAKFP (TO-281)
Dimension: TO-262-3 Full Pack, I2Pak
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 1370pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Quantity per package: 50