STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STF9HN65M2

Description
Win Source Part Number: 984746-STF9HN65M2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2 Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 20W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16014-5,-497-160 14-5 Base Product Number: STF9 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 984746-STF9HN65M2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2 Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 20W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16014-5,-497-160 14-5 Base Product Number: STF9 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 984746-STF9HN65M2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
984746-STF9HN65M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 984746-STF9HN65M2
Win Source Part Number: 984746-STF9HN65M2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2 Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 20W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16014-5,-497-160 14-5 Base Product Number: STF9 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 984746-STF9HN65M2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ M2
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16014-5,-497-16014-5
Base Product Number: STF9
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

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Sheung Wan, Hong Kong
MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package

MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF9HN65M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF9HN65M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF9HN65M2
MOSFET N-CH 650V 5.5A TO220FP

MOSFET N-CH 650V 5.5A TO220FP

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 984746-STF9HN65M2 STF9HN65M2 STF9HN65M2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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