STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF8NM60ND STF8NM60ND

Description
Manufacturer: STMicroelectronics Win Source Part Number: 015770-STF8NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 560pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited Quantity per package: 50
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 015770-STF8NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 560pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF8NM60ND - 015770-STF8NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF8NM60ND
015770-STF8NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF8NM60ND 015770-STF8NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 015770-STF8NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 560pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: STMicroelectronics
Win Source Part Number: 015770-STF8NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 560pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 700 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - STF8NM60ND - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF8NM60ND
Single FETs, MOSFETs STF8NM60ND
MOSFET N-CH 600V 7A TO220FP

MOSFET N-CH 600V 7A TO220FP

Supplier's Site Datasheet
Singapore
N-Channel 600 V 7 A TO-220 MOSFET Transistor
278-STF8NM60ND
N-Channel 600 V 7 A TO-220 MOSFET Transistor 278-STF8NM60ND
N-channel 600 V, 0.59 Ω, 7 A, FDmesh͐2;2; II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Product overview: STF8NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 7 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 7 A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF8NM60ND can be used for catalog matching and distributor lookup.

N-channel 600 V, 0.59 Ω, 7 A, FDmesh͐2;2; II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Product overview: STF8NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 7 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 7 A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF8NM60ND can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF8NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF8NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF8NM60ND
MOSFET N-CH 600V 7A TO220FP

MOSFET N-CH 600V 7A TO220FP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NCH 6V 7A FDMESH FDMesh

MOSFET NCH 6V 7A FDMESH FDMesh

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 015770-STF8NM60ND STF8NM60ND 278-STF8NM60ND STF8NM60ND STF8NM60ND
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF8NM60ND Single FETs, MOSFETs N-Channel 600 V 7 A TO-220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 25000 milliwatts 25000 milliwatts 25000 milliwatts
TJ 150 C (302 F) 150 C (302 F) -55 C (-67 F)
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