STMicroelectronics, Inc. Single FETs, MOSFETs STF8N65M5

Description
N-Channel 650V 7A (Tc) 25W (Tc) Through Hole TO-220FP
  • Single FETs, MOSFETs - 497-11398-5-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF8N65M5 - 083811-STF8N65M5 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF8N65M5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 650V, 7A, To-220Fp; Channel Type Stmicroelectronics - 21T4001 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 650V 7A (Tc) 25W (Tc) Through Hole TO-220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-11398-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11398-5-ND
Single FETs, MOSFETs 497-11398-5-ND
N-Channel 650V 7A (Tc) 25W (Tc) Through Hole TO-220FP

N-Channel 650V 7A (Tc) 25W (Tc) Through Hole TO-220FP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF8N65M5 - 083811-STF8N65M5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF8N65M5
083811-STF8N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF8N65M5 083811-STF8N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 083811-STF8N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 690pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 083811-STF8N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 690pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF8N65M5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF8N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF8N65M5
MOSFET N-CH 650V 7A TO220FP

MOSFET N-CH 650V 7A TO220FP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STF8N65M5
MOSFET STF8N65M5
MOSFET N-Ch 650V 0.56 Ohm 7A MDmesh M5 PWR MO

MOSFET N-Ch 650V 0.56 Ohm 7A MDmesh M5 PWR MO

Buy Now Datasheet
Mosfet, N Channel, 650V, 7A, To-220Fp; Channel Type Stmicroelectronics - 21T4001 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 650V, 7A, To-220Fp; Channel Type Stmicroelectronics
21T4001
Mosfet, N Channel, 650V, 7A, To-220Fp; Channel Type Stmicroelectronics 21T4001
MOSFET, N CHANNEL, 650V, 7A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 650V, 7A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-11398-5-ND 083811-STF8N65M5 STF8N65M5 STF8N65M5 21T4001
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF8N65M5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Channel, 650V, 7A, To-220Fp; Channel Type Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP TO-220; TO-220-3 Full Pack TO-3; TO-220
V(BR)DSS 650 volts
PD 25000 milliwatts
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