MOSFET N-CH 650V 5.4A TO220FP
Manufacturer: STMicroelectronics
Win Source Part Number: 091626-STF6N65K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 5.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 880pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.8A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
N-Channel 650V 5.4A (Tc) 30W (Tc) Through Hole TO-220FP
MOSFET N-CH 650V 5.4A TO220FP
650V 5.4A 30W 1.3Ω@10V,2.8A 4.5V@50uA N Channel TO-220AB-3 MOSFETs ROHS
MOSFET, N-CH, 650V, 5.4A, TO-220FP ROHS COMPLIANT: YES
MOSFET N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STF6N65K3 | 091626-STF6N65K3 | 497-12424-ND | STF6N65K3 | STF6N65K3 | 47AK6948 | STF6N65K3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF6N65K3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 650V, 5.4A, To-220Fp Rohs Compliant Stmicroelectronics | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 650 volts | 650 volts | 650 volts | ||||
| IDSS | 5400 milliamps | ||||||
| PD | 30000 milliwatts | 30000 milliwatts | 30000 milliwatts |