STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF4N62K3 STF4N62K3

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102965-STF4N62K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 620V Continuous Drain Current at 25°C: 3.8A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 550pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102965-STF4N62K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 620V Continuous Drain Current at 25°C: 3.8A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 550pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF4N62K3 - 1102965-STF4N62K3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF4N62K3
1102965-STF4N62K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF4N62K3 1102965-STF4N62K3
Manufacturer: STMicroelectronics Win Source Part Number: 1102965-STF4N62K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 620V Continuous Drain Current at 25°C: 3.8A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 550pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102965-STF4N62K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 620V
Continuous Drain Current at 25°C: 3.8A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 550pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 1.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-12580-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12580-5-ND
Single FETs, MOSFETs 497-12580-5-ND
N-Channel 620V 3.8A (Tc) 25W (Tc) Through Hole TO-220FP

N-Channel 620V 3.8A (Tc) 25W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3

MOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3

Buy Now Datasheet
Mosfet, N Ch, 620V, 3.8A, To-220Fp; Channel Type Stmicroelectronics - 21T3995 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 620V, 3.8A, To-220Fp; Channel Type Stmicroelectronics
21T3995
Mosfet, N Ch, 620V, 3.8A, To-220Fp; Channel Type Stmicroelectronics 21T3995
MOSFET, N CH, 620V, 3.8A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:3.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 620V, 3.8A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:3.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF4N62K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF4N62K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF4N62K3
MOSFET N-CH 620V 3.8A TO220FP

MOSFET N-CH 620V 3.8A TO220FP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1102965-STF4N62K3 497-12580-5-ND STF4N62K3 21T3995 STF4N62K3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF4N62K3 Single FETs, MOSFETs MOSFET Mosfet, N Ch, 620V, 3.8A, To-220Fp; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 620 volts
PD 25000 milliwatts
TJ 150 C (302 F)
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