STMicroelectronics, Inc. Single FETs, MOSFETs STF3N80K5

Description
N-Channel 800V 2.5A (Tc) 20W (Tc) Through Hole TO-220FP
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Description
N-Channel 800V 2.5A (Tc) 20W (Tc) Through Hole TO-220FP
Request a Quote Datasheet

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Single FETs, MOSFETs - 497-14272-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14272-5-ND
Single FETs, MOSFETs 497-14272-5-ND
N-Channel 800V 2.5A (Tc) 20W (Tc) Through Hole TO-220FP

N-Channel 800V 2.5A (Tc) 20W (Tc) Through Hole TO-220FP

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF3N80K5 - 212274-STF3N80K5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF3N80K5
212274-STF3N80K5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF3N80K5 212274-STF3N80K5
Manufacturer: STMicroelectronics Win Source Part Number: 212274-STF3N80K5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Family Name: STF3N80K5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 130pF @ 100V Maximum Gate-Source Voltage: 30V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 1A, 10V Alternative Parts (Cross-Reference): TK4A80; EFS3KM-16A; TSM3N80CI C0G; 2SK2294; Introduction Date: March 12, 2013 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2033 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 212274-STF3N80K5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 20W (Tc)
Family Name: STF3N80K5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 9.5nC @ 10V
Max Input Capacitance: 130pF @ 100V
Maximum Gate-Source Voltage: 30V
Maximum Rds On at Id,Vgs: 3.5 Ohm @ 1A, 10V
Alternative Parts (Cross-Reference): TK4A80; EFS3KM-16A; TSM3N80CI C0G; 2SK2294;
Introduction Date: March 12, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2033
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected

MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF3N80K5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF3N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF3N80K5
MOSFET N-CH 800V 2.5A TO220FP

MOSFET N-CH 800V 2.5A TO220FP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-14272-5-ND 212274-STF3N80K5 STF3N80K5 STF3N80K5
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF3N80K5 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP TO-220; TO-220-3 Full Pack
V(BR)DSS 800 volts
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