MOSFET N-CH 650V 32A TO220FP
Win Source Part Number: 1278111-STF35N65DM2
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ DM2
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STF35
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 32A (Tc) 40W (Tc) Through Hole TO-220FP
MOSFET N-CH 650V 32A TO220FP
MOSFET, N-CH, 32A, 650V, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.093ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STF35N65DM2 | 1278111-STF35N65DM2 | STF35N65DM2-ND | STF35N65DM2 | STF35N65DM2 | 94AC2233 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 32A, 650V, To-220Fp; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | |||||
| IDSS | 32000 milliamps | 32000 milliamps | ||||
| PD | 40000 milliwatts |
