Win Source Part Number: 1278111-STF35N65DM2
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ DM2
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STF35
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 32A TO220FP
N-channel 650 V, 0.093 Ohm typ., 32 A MDmesh DM2 Power MOSFET in a TO-220FP package Product overview: STF35N65DM2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.093 Ohm, 32 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.093 Ohm, 32 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF35N65DM2 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 32A TO220FP
MOSFET, N-CH, 32A, 650V, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.093ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1278111-STF35N65DM2 | STF35N65DM2 | 278-STF35N65DM2 | STF35N65DM2 | STF35N65DM2 | 94AC2233 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | N-Channel 650 V 0.093 Ohm 32 A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 32A, 650V, To-220Fp; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; SOT3 | TO-220; TO-220-3 Full Pack | 2540 pF @ 100 V | TO-3; TO-220 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | |||||
| IDSS | 32000 milliamps | 32000 milliamps |
