The STMicroelectronics N-channel MOSFET, part number 45AC7571, is rated for a maximum drain-source voltage of 600V and a continuous drain current of 26A. It features a low on-resistance of 0.108 Oc, which contributes to its efficiency in high-performance applications. The device is designed using MDmesh II Plus technology, which combines a vertical structure with a strip layout to achieve low gate charge and on-resistance. This MOSFET is suitable for various switching applications, including LCC and resonant converters. It is packaged in a TO-220FP format, allowing for through-hole mounting. The maximum junction temperature is rated at 150¬8C, and it has been 100% avalanche tested, ensuring reliability in demanding environments.
Manufacturer: STMicroelectronics
Win Source Part Number: 212273-STF33N60M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45.5nC @ 10V
Max Input Capacitance: 1781pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 125 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
N-Channel 600V 26A (Tc) 35W (Tc) Through Hole TO-220FP
MOSFET N-CH 600V 26A TO220FP
MOSFET N-CH 600V 26A TO220FP
MOSFET, N-CH, 600V, 26A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 600V 0.108Ohm 26A MDmesh M2
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 212273-STF33N60M2 | 497-14217-5-ND | STF33N60M2 | STF33N60M2 | 45AC7571 | STF33N60M2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF33N60M2 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 26A, To-220Fp; Channel Type Stmicroelectronics | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | ||||
| PD | 35000 milliwatts | 35000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
