The STMicroelectronics N-channel MOSFET, part number 45AC7571, is rated for a maximum drain-source voltage of 600V and a continuous drain current of 26A. It features a low on-resistance of 0.108 Oc, which contributes to its efficiency in high-performance applications. The device is designed using MDmesh II Plus technology, which combines a vertical structure with a strip layout to achieve low gate charge and on-resistance. This MOSFET is suitable for various switching applications, including LCC and resonant converters. It is packaged in a TO-220FP format, allowing for through-hole mounting. The maximum junction temperature is rated at 150¬8C, and it has been 100% avalanche tested, ensuring reliability in demanding environments.
MOSFET N-CH 600V 26A TO220FP
600V 26A N-CH MOSFET TO-220FP 108mR RdsOn Product overview: STF33N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 26A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 26A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF33N60M2 can be used for catalog matching and distributor lookup.
N-Channel 600V 26A (Tc) 35W (Tc) Through Hole TO-220FP
Manufacturer: STMicroelectronics
Win Source Part Number: 212273-STF33N60M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45.5nC @ 10V
Max Input Capacitance: 1781pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 125 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 26A TO220FP
MOSFET N-CH 600V 0.108Ohm 26A MDmesh M2
MOSFET, N-CH, 600V, 26A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STF33N60M2 | 278-STF33N60M2 | 497-14217-5-ND | 212273-STF33N60M2 | STF33N60M2 | STF33N60M2 | 45AC7571 |
| Product Name | Single FETs, MOSFETs | 600V 26A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF33N60M2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 26A, To-220Fp; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| IDSS | 26000 milliamps | 26000 milliamps |
