STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF30N10F7 STF30N10F7

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102957-STF30N10F7 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 1270pF @ 50V Maximum Gate-Source Voltage: 20V Maximum Rds On at Id,Vgs: 24 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): FDPF3860T; STF25N10F7; Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF30N10F7 - 1102957-STF30N10F7 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF30N10F7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 100V, 24A, 175Deg C, 25W Rohs Compliant Stmicroelectronics - 69AH2718 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102957-STF30N10F7 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 1270pF @ 50V Maximum Gate-Source Voltage: 20V Maximum Rds On at Id,Vgs: 24 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): FDPF3860T; STF25N10F7; Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF30N10F7 - 1102957-STF30N10F7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF30N10F7
1102957-STF30N10F7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF30N10F7 1102957-STF30N10F7
Manufacturer: STMicroelectronics Win Source Part Number: 1102957-STF30N10F7 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 1270pF @ 50V Maximum Gate-Source Voltage: 20V Maximum Rds On at Id,Vgs: 24 mOhm @ 16A, 10V Alternative Parts (Cross-Reference): FDPF3860T; STF25N10F7; Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102957-STF30N10F7
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 1270pF @ 50V
Maximum Gate-Source Voltage: 20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): FDPF3860T; STF25N10F7;
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF30N10F7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF30N10F7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF30N10F7
MOSFET N-CH 100V 24A TO220FP

MOSFET N-CH 100V 24A TO220FP

Supplier's Site
Mosfet, N-Ch, 100V, 24A, 175Deg C, 25W Rohs Compliant Stmicroelectronics - 69AH2718 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 24A, 175Deg C, 25W Rohs Compliant Stmicroelectronics
69AH2718
Mosfet, N-Ch, 100V, 24A, 175Deg C, 25W Rohs Compliant Stmicroelectronics 69AH2718
MOSFET, N-CH, 100V, 24A, 175DEG C, 25W ROHS COMPLIANT: YES

MOSFET, N-CH, 100V, 24A, 175DEG C, 25W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102957-STF30N10F7 STF30N10F7 69AH2718
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF30N10F7 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 100V, 24A, 175Deg C, 25W Rohs Compliant Stmicroelectronics
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 25000 milliwatts
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