STMicroelectronics, Inc. Single FETs, MOSFETs STF28N65M2

Description
N-Channel 650V 20A (Tc) 30W (Tc) Through Hole TO-220FP
Request a Quote Datasheet
Description
N-Channel 650V 20A (Tc) 30W (Tc) Through Hole TO-220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-15534-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15534-5-ND
Single FETs, MOSFETs 497-15534-5-ND
N-Channel 650V 20A (Tc) 30W (Tc) Through Hole TO-220FP

N-Channel 650V 20A (Tc) 30W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Single FETs, MOSFETs - STF28N65M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF28N65M2
Single FETs, MOSFETs STF28N65M2
MOSFET N-CH 650V 20A TO220FP

MOSFET N-CH 650V 20A TO220FP

Supplier's Site Datasheet
Electronic Wholesale - STF28N65M2 - 1260962-STF28N65M2 - Win Source Electronics
Laguna Hills, CA, United States
Electronic Wholesale - STF28N65M2
1260962-STF28N65M2
Electronic Wholesale - STF28N65M2 1260962-STF28N65M2
Manufacturer: STMicroelectronics Win Source Part Number: 1260962-STF28N65M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 30W Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 20A Rds On (Maximum) at Id, Vgs: 180mOhm at 10A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1440pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260962-STF28N65M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 30W
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 20A
Rds On (Maximum) at Id, Vgs: 180mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1440pF at 100V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF28N65M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF28N65M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF28N65M2
MOSFET N-CH 650V 20A TO220FP

MOSFET N-CH 650V 20A TO220FP

Supplier's Site
Mosfet, N-Ch, 650V, 20A, 150Deg C, 30W; Transistor Polarity Stmicroelectronics - 26AH0167 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 20A, 150Deg C, 30W; Transistor Polarity Stmicroelectronics
26AH0167
Mosfet, N-Ch, 650V, 20A, 150Deg C, 30W; Transistor Polarity Stmicroelectronics 26AH0167
MOSFET, N-CH, 650V, 20A, 150DEG C, 30W; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 650V, 20A, 150DEG C, 30W; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP package

MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP package

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Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-15534-5-ND STF28N65M2 1260962-STF28N65M2 STF28N65M2 26AH0167 STF28N65M2
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Electronic Wholesale - STF28N65M2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 650V, 20A, 150Deg C, 30W; Transistor Polarity Stmicroelectronics MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; SOT3 TO-220; TO-220-3 Full Pack TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts 650 volts
IDSS 20000 milliamps 20000 milliamps
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