N-Channel 650V 20A (Tc) 30W (Tc) Through Hole TO-220FP
N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP package Product overview: STF28N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.15 Ohm, 20 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.15 Ohm, 20 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF28N65M2 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 20A TO220FP
Manufacturer: STMicroelectronics
Win Source Part Number: 1260962-STF28N65M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 30W
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 20A
Rds On (Maximum) at Id, Vgs: 180mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1440pF at 100V
MOSFET, N-CH, 650V, 20A, 150DEG C, 30W; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 650V 20A TO220FP
MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP package
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-15534-5-ND | 278-STF28N65M2 | STF28N65M2 | 1260962-STF28N65M2 | 26AH0167 | STF28N65M2 | STF28N65M2 |
| Product Name | Single FETs, MOSFETs | N-Channel 650 V 0.15 Ohm 20 A MOSFET Transistor | Single FETs, MOSFETs | Electronic Wholesale - STF28N65M2 | Mosfet, N-Ch, 650V, 20A, 150Deg C, 30W; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | TO-220; SOT3 | TO-3 | TO-220; TO-220-3 Full Pack | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 650 volts | 650 volts | |||||
| IDSS | 20000 milliamps | 20000 milliamps |
