STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF26NM60N STF26NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 031181-STF26NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Family Name: STF26NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1800pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 165 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): FCPF165N65S3R0L; IPA65R225C7; IPA65R190C7; Introduction Date: April 29, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF26NM60N - 031181-STF26NM60N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STF26NM60N - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-STF26NM60N-ND - DigiKey
    DigiKey
  • Mosfet, N Ch, 600V, 20A, To220Fp; Transistor Polarity Stmicroelectronics - 26R7052 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF26NM60N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 031181-STF26NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Family Name: STF26NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1800pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 165 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): FCPF165N65S3R0L; IPA65R225C7; IPA65R190C7; Introduction Date: April 29, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF26NM60N - 031181-STF26NM60N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF26NM60N
031181-STF26NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF26NM60N 031181-STF26NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 031181-STF26NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Family Name: STF26NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1800pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 165 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): FCPF165N65S3R0L; IPA65R225C7; IPA65R190C7; Introduction Date: April 29, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 031181-STF26NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Family Name: STF26NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1800pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 165 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): FCPF165N65S3R0L; IPA65R225C7; IPA65R190C7;
Introduction Date: April 29, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1032000
MOSFETs 1032000
MOSFET N-Channel 600V 20A TO220FP

MOSFET N-Channel 600V 20A TO220FP

Supplier's Site
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7612792
MOSFETs 7612792
MOSFET N-Channel 600V 20A TO220FP

MOSFET N-Channel 600V 20A TO220FP

Supplier's Site
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7612792P
MOSFETs 7612792P
MOSFET N-Channel 600V 20A TO220FP

MOSFET N-Channel 600V 20A TO220FP

Supplier's Site
Single FETs, MOSFETs - STF26NM60N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF26NM60N
Single FETs, MOSFETs STF26NM60N
MOSFET N-CH 600V 20A TO220FP

MOSFET N-CH 600V 20A TO220FP

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-STF26NM60N-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STF26NM60N-ND
Single FETs, MOSFETs 497-STF26NM60N-ND
N-Channel 600V 20A (Tc) 35W (Tc) Through Hole TO-220FP

N-Channel 600V 20A (Tc) 35W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Mosfet, N Ch, 600V, 20A, To220Fp; Transistor Polarity Stmicroelectronics - 26R7052 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 20A, To220Fp; Transistor Polarity Stmicroelectronics
26R7052
Mosfet, N Ch, 600V, 20A, To220Fp; Transistor Polarity Stmicroelectronics 26R7052
MOSFET, N CH, 600V, 20A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N CH, 600V, 20A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
STF26NM60N
Triode/MOS Tube/Transistor >> MOSFETs STF26NM60N
600V 20A 165mΩ@10V,10A 35W 4V@250uA N Channel TO-220FP MOSFETs ROHS

600V 20A 165mΩ@10V,10A 35W 4V@250uA N Channel TO-220FP MOSFETs ROHS

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STF26NM60N
MOSFET STF26NM60N
MOSFET N-channel 600 V 20 A Mdmesh

MOSFET N-channel 600 V 20 A Mdmesh

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF26NM60N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF26NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF26NM60N
MOSFET N-CH 600V 20A TO220FP

MOSFET N-CH 600V 20A TO220FP

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) DigiKey Newark, An Avnet Company LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 031181-STF26NM60N 1032000 7612792P STF26NM60N 497-STF26NM60N-ND 26R7052 STF26NM60N STF26NM60N STF26NM60N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF26NM60N MOSFETs MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N Ch, 600V, 20A, To220Fp; Transistor Polarity Stmicroelectronics Triode/MOS Tube/Transistor >> MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts 600 volts 600 volts 600 volts
PD 35000 milliwatts 35000 milliwatts 35000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type TO-220; SOT3; TO-220FP TO-220; TO-220FP TO-220; TO-220FP TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-3 TO-220 TO-220; TO-220-3 Full Pack
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