STMicroelectronics, Inc. FETs - Single - STF26N60M2 STF26N60M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 809998-STF26N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600V Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 30W (Tc) Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 165mOhm at 11A, 10V Current - Continuous Drain (Id) at 25°C: 20A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STF26 Maximum Vgs: ±25V
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 809998-STF26N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600V Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 30W (Tc) Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 165mOhm at 11A, 10V Current - Continuous Drain (Id) at 25°C: 20A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STF26 Maximum Vgs: ±25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STF26N60M2 - 809998-STF26N60M2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STF26N60M2
809998-STF26N60M2
FETs - Single - STF26N60M2 809998-STF26N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 809998-STF26N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600V Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 30W (Tc) Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 165mOhm at 11A, 10V Current - Continuous Drain (Id) at 25°C: 20A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STF26 Maximum Vgs: ±25V

Manufacturer: STMicroelectronics
Win Source Part Number: 809998-STF26N60M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 30W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 165mOhm at 11A, 10V
Current - Continuous Drain (Id) at 25°C: 20A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STF26
Maximum Vgs: ±25V

Buy Now
Single FETs, MOSFETs - 497-16514-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16514-5-ND
Single FETs, MOSFETs 497-16514-5-ND
N-Channel 600V 20A (Tc) 30W (Tc) Through Hole TO-220FP

N-Channel 600V 20A (Tc) 30W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Single FETs, MOSFETs - STF26N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF26N60M2
Single FETs, MOSFETs STF26N60M2
MOSFET N-CH 600V 20A TO220FP

MOSFET N-CH 600V 20A TO220FP

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP package

MOSFET N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF26N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF26N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF26N60M2
MOSFET N-CH 600V 20A TO220FP

MOSFET N-CH 600V 20A TO220FP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 809998-STF26N60M2 497-16514-5-ND STF26N60M2 STF26N60M2 STF26N60M2
Product Name FETs - Single - STF26N60M2 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
PD 30000 milliwatts 30000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules - 448-2ED300C17SROHSBPSA1-ND - DigiKey
Infineon Technologies AG
Specs
Package Type Module
View Details
2 suppliers
DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor - QPD1013 - Qorvo
Specs
Transistor Technology / Material DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor
Transistor Grade / Operating Range Military
Package Type DFN
View Details