STMicroelectronics, Inc. Single FETs, MOSFETs STF26N60M2

Description
N-Channel 600V 20A (Tc) 30W (Tc) Through Hole TO-220FP
Request a Quote Datasheet
Description
N-Channel 600V 20A (Tc) 30W (Tc) Through Hole TO-220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-16514-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16514-5-ND
Single FETs, MOSFETs 497-16514-5-ND
N-Channel 600V 20A (Tc) 30W (Tc) Through Hole TO-220FP

N-Channel 600V 20A (Tc) 30W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Single FETs, MOSFETs - STF26N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF26N60M2
Single FETs, MOSFETs STF26N60M2
MOSFET N-CH 600V 20A TO220FP

MOSFET N-CH 600V 20A TO220FP

Supplier's Site Datasheet
FETs - Single - STF26N60M2 - 809998-STF26N60M2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STF26N60M2
809998-STF26N60M2
FETs - Single - STF26N60M2 809998-STF26N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 809998-STF26N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600V Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 30W (Tc) Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 165mOhm at 11A, 10V Current - Continuous Drain (Id) at 25°C: 20A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STF26 Maximum Vgs: ±25V

Manufacturer: STMicroelectronics
Win Source Part Number: 809998-STF26N60M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 30W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 165mOhm at 11A, 10V
Current - Continuous Drain (Id) at 25°C: 20A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STF26
Maximum Vgs: ±25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF26N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF26N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF26N60M2
MOSFET N-CH 600V 20A TO220FP

MOSFET N-CH 600V 20A TO220FP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP package

MOSFET N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP package

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-16514-5-ND STF26N60M2 809998-STF26N60M2 STF26N60M2 STF26N60M2
Product Name Single FETs, MOSFETs Single FETs, MOSFETs FETs - Single - STF26N60M2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; SOT3 TO-220; TO-220-3 Full Pack
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
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