Manufacturer: STMicroelectronics
Win Source Part Number: 005564-STF24NM65N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2500pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9.5A, 10V
Alternative Parts (Cross-Reference): IPA60R190E6; STF28NM60ND; STF23NM60ND; STF24NM65N;
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 50
N-Channel 650V 19A (Tc) 40W (Tc) Through Hole TO-220FP
MOSFET N-CH 650V 19A TO220FP
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 005564-STF24NM65N | 497-11394-5-ND | STF24NM65N |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF24NM65N | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 650 volts | ||
| PD | 40000 milliwatts |
